K4E171612D-T Datasheet,K4E171612D-T PDF

K4E171612D-T Data sheet

Datasheet PDF | 문의 | 사이트맵 | 즐겨찾기

검색:

경로: Datasheet PDF > 반도체 제조 업체에 > Samsung > K4E171612D-T Datasheet

데이터 시트 PDF에 대한K4E171612D-T검색 결과를

 DatasheetPDF 찾은 한 문서와 일치하는 검색어 :

부품 번호 :K4E171612D-T
제조 업체 :Samsung

Samsung Semiconductor, Inc.
온도 :min 0°c | max 70°c
설명 :1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle. www.Datasheetpdf.com

구입하다 K4E171612D-T
PDF 크기 : Kb PDF 페이지 : Page
데이터 시트 다운로드 :


K4E171612D-T Datasheet

관련 일부 지역

K4E171612D-T
Samsung Semiconductor, Inc.
1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.

K4E170411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 4k refresh cycle.

K4E170412D-F
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.

K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.

K4E160811D-F
Samsung Semiconductor, Inc.
2m x 8 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.

K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.