English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
ItalianDatasheet PDF para K4E171612D-T Os resultados da pesquisa
DatasheetPDF encontrados 1 documentos PDF que correspondem à sua consulta:
Parte n º:K4E171612D-T
Fabricante:Samsung
Samsung Semiconductor, Inc.
Temperatura:min 0°c | max 70°c
Descrição:1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
Comprar K4E171612D-T
PDF Tamanho: Kb PDF Páginas: Page
Datasheet Download:
Relacionados no lado
K4E171612D-T
Samsung Semiconductor, Inc.
1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
K4E170411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 4k refresh cycle.
K4E170412D-F
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
K4E160811D-F
Samsung Semiconductor, Inc.
2m x 8 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
TOP