Технические характеристики PDF для K4E171612D-T результаты поиска
DatasheetPDF найдено 1 PDF документы, соответствующие вашему запросу:
Electronic component:K4E171612D-T
Произв:Samsung
Samsung Semiconductor, Inc.
Температура:min 0°c | max 70°c
Описание:1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
Покупать K4E171612D-T
PDF Размер: Kb PDF Страниц: Page
Технические характеристики Загрузить:
Похожие части нет
K4E171612D-T
Samsung Semiconductor, Inc.
1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
K4E170411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 4k refresh cycle.
K4E170412D-F
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
K4E160811D-F
Samsung Semiconductor, Inc.
2m x 8 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
K4E160411D-B
Samsung Semiconductor, Inc.
4m x 4 bit cmos dynamic ram with extended data out. supply voltage 5v, 2k refresh cycle.
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
TOP