Datasheet PDF pro K4E160812D-F výsledky vyhledávání

• Část č.: K4E160812D-F

  Výrobce:
  Samsung

  Teplota:
  

  Popis:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

  Velikost PDF: Kb PDF Strany: Page

  Koupit K4E160812D-F

DatasheetPDF nalezeno 1 PDF dokumenty odpovídající dotazu:

Datasheet ke stažení:
K4E160812D-F PDF

Související část ne

• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
• K4E160811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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