PDF-Datenblatt für APT17 Suchergebnisse
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Art-Nr: APT17
Hersteller:
BCD Semiconductor Manufacturing LimitedTemperatur:
Beschreibung:
HIGH VOLTAGE NPN TRANSISTORPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Verwandte Bestell-Nr
- APT-104 ABRACON[Abracon Corporation]
COUPLING TRANSFORMERS - APT-DINAV53G3 ETC[ETC]
3-channel Power Transducer - APT05DC120HJ Microsemi
ISOTOP Diode Full Bridge Power Module - APT06DC60HJ Microsemi
ISOTOP Diode Full Bridge Power Module - APT100-101DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP - APT1001 ADPOW[Advanced Power Technology]
Power generation gate charge, high voltage N-Channel enhancement mode power MOSFETs - APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 - APT1001R1AVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs - APT1001R1BN Advanced Power Technology
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD - APT1001R1BVFR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP - APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO - APT1001R1HVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
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