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• Część nr: APT1001R1BVFR

  Producent:
  Advanced Power Technology

  Temperatura:
  

  Opis:
  Power generation high voltage N-Channel enhancement mode power MOSFETs.

  PDF Rozmiar: Kb PDF Strony: Page

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Powiązane Część nr

• APT1001R1AN
  TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
• APT1001R1AVR Advanced Power Technology
  Power generation high voltage N-Channel enhancement mode power MOSFETs
• APT1001R1BN Advanced Power Technology
  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
• APT1001R1BNR
  TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
• APT1001R1BVFR Advanced Power Technology
  Power generation high voltage N-Channel enhancement mode power MOSFETs.
• APT1001R1DN
  TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
• APT1001R1HN
  TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
• APT1001R1HVR Advanced Power Technology
  Power generation high voltage N-Channel enhancement mode power MOSFETs.
• APT1001R1SN
  TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB

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