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Parte No: F2004
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POLYFET[Polyfet Devices]Temperatura:
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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTORPDF Tamaño: Kb PDF Páginas: Page
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F2004 PDF
Relacionado parte no
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TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 800MA I(D) - F2002 POLYFET[Polyfet Devices]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2002ERW MicroPower Direct, LLC
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters - F2002S
TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 1.6A I(D) - F2003 Polyfet Devices
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2003ERW MicroPower Direct, LLC
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters - F2004 POLYFET[Polyfet Devices]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2004ERW MicroPower Direct, LLC
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters - F2005ERW MicroPower Direct, LLC
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters - F2006ERW MicroPower Direct, LLC
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
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