Datablad PDF För K4E151611D-J Sökresultat

• Del nr: K4E151611D-J

  Tillverkare:
  Samsung

  Temperatur:
  

  Beskrivning:
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.

  PDF Storlek: Kb PDF: Page

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Liknande Del nr

• K4E151611 Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151611D Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151611D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
• K4E151611D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
• K4E151612D Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151612D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
• K4E151612D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.

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